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CMC Materials, Inc. Patents: Applications Rejected

CMC Materials, Inc. Patent Applications Rejected

7 applications abandoned without a patent; the status gives the reason, newest filing first, as the USPTO Open Data Portal records them; the company is the first-named applicant. The application number opens the full record at Patent Center.

  • 2023-01-30: Application 18103135; Invention ENDPOINT WINDOW WITH CONTROLLED TEXTURE SURFACE; Applicant CMC Materials, Inc.; Status Abandoned -- Failure to Respond to an Office Action.
  • 2022-10-24: Application 17972509; Invention COMPOSITION AND METHOD FOR COBALT CMP; Applicant CMC Materials, Inc.; Status Abandoned -- After Examiner's Answer or Board of Appeals Decision.
  • 2022-02-03: Application 17592294; Invention CERIA-BASED SLURRY COMPOSITIONS FOR SELECTIVE AND NONSELECTIVE CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON; Applicant CMC Materials, Inc.; Status Abandoned -- After Examiner's Answer or Board of Appeals Decision.
  • 2022-02-03: Application 17592279; Invention CERIA-BASED SLURRY COMPOSITIONS FOR SELECTIVE AND NONSELECTIVE CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON; Applicant CMC Materials, Inc.; Status Abandoned -- After Examiner's Answer or Board of Appeals Decision.
FiledApplicationInventionApplicantStatusPublished asInventor nameInventor countryExaminer
2023-01-3018103135ENDPOINT WINDOW WITH CONTROLLED TEXTURE SURFACECMC Materials, Inc.Abandoned -- Failure to Respond to an Office ActionUS20230166380A1
Paul Andre LEFEVRE
Dustin MILLER
Gary SNIDER
Carlos BARROS
Anthony GALTO
United States
United States
United States
United States
United States
CRANDALL, JOEL DILLON
2022-10-2417972509COMPOSITION AND METHOD FOR COBALT CMPCMC Materials, Inc.Abandoned -- After Examiner's Answer or Board of Appeals DecisionUS20230059396A1
Fernando HUNG LOW
Steven KRAFT
Roman A. IVANOV
Steven GRUMBINE
Andrew R. WOLFF
United States
United States
United States
United States
United States
DUCLAIR, STEPHANIE P.
2022-02-0317592294CERIA-BASED SLURRY COMPOSITIONS FOR SELECTIVE AND NONSELECTIVE CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICONCMC Materials, Inc.Abandoned -- After Examiner's Answer or Board of Appeals DecisionUS20230242791A1
Brian REISS
Juyeon CHANG
Shengyu JIN
Helin HUANG
United States
United States
United States
United States
AHMED, SHAMIM
2022-02-0317592279CERIA-BASED SLURRY COMPOSITIONS FOR SELECTIVE AND NONSELECTIVE CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICONCMC Materials, Inc.Abandoned -- After Examiner's Answer or Board of Appeals DecisionUS20230242790A1
Brian Reiss
Juyeon Chang
Shengyu Jin
Helin Huang
United States
United States
United States
United States
AHMED, SHAMIM
2021-10-2917607743CHEMICAL-MECHANICAL POLISHING PAD WITH TEXTURED PLATEN ADHESIVECMC Materials, Inc.Abandoned -- Failure to Respond to an Office ActionUS20220203497A1
Paul Andre LEFEVRE
Jason JEWETT
Eric EICHENBAUM
Holland HODGES
United States
United States
United States
United States
ROSEN, ERIC J
2021-09-1717478690CHEMICAL MECHANICAL PLANARIZATION PAD WITH A RELEASE LINER COMPRISING A PULL TABCMC Materials, Inc.Abandoned -- Failure to Respond to an Office ActionUS20230090077A1
Justin Stewart
Gary Snider
Carlos Barros
United States
United States
United States
HUANG, STEVEN
2021-07-1917379279SILICON WAFER POLISHING COMPOSITION AND METHODCMC Materials, Inc.Abandoned -- Failure to Respond to an Office ActionUS20220017781A1
Hiroshi KITAMURA
Tsuyoshi MASUDA
Yoshiyuki MATSUMURA
Akihisa NAMIKI
Takeshi SAITO
Japan
Japan
Japan
Japan
Japan
LU, JIONG-PING