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ATOMERA INCORPORATED (ATOM) Patents: Active, 2019

ATOMERA INCORPORATED Active Patents

14 granted patents the USPTO still lists as patented, newest filing first, as the USPTO Open Data Portal records them; the company is the first-named applicant. The application number opens the full record at Patent Center.

  • 2019-07-17: Application 16513943; Invention METHOD FOR MAKING A VARACTOR WITH HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICE; Applicant ATOMERA INCORPORATED; Status Patented Case.
  • 2019-07-17: Application 16513932; Invention VARACTOR WITH HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICE; Applicant ATOMERA INCORPORATED; Status Patented Case.
  • 2019-07-17: Application 16513906; Invention METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICE; Applicant ATOMERA INCORPORATED; Status Patented Case.
  • 2019-07-17: Application 16513895; Invention SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICE; Applicant Atomera Incorporated; Status Patented Case.
FiledApplicationInventionApplicantStatusGrantedPatentPublished asInventor nameInventor countryExaminer
2019-07-1716513943METHOD FOR MAKING A VARACTOR WITH HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2020-12-1510868120
RICHARD BURTON
MAREK HYTHA
ROBERT J. MEARS
United States
United States
United States
REAMES, MATTHEW L
2019-07-1716513932VARACTOR WITH HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2020-11-1710840388
Richard Burton
Marek Hytha
Robert J. Mears
United States
United States
United States
VU, DAVID
2019-07-1716513906METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2020-12-2910879357US20210020748A1
Richard Burton
Marek Hytha
Robert J. Mears
United States
United States
United States
REAMES, MATTHEW L
2019-07-1716513895SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUDING A SUPERLATTICEAtomera IncorporatedPatented Case2020-11-0310825901
Richard Burton
Marek Hytha
Robert J. Mears
United States
United States
United States
SPALLA, DAVID C
2019-07-1716513875METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION INCLUDING SPACED-APART SUPERLATTICESATOMERA INCORPORATEDPatented Case2021-03-0210937888US20210020759A1
RICHARD BURTON
MAREK HYTHA
ROBERT J. MEARS
United States
United States
United States
REAMES, MATTHEW L
2019-07-1716513845VARACTOR WITH HYPER-ABRUPT JUNCTION REGION INCLUDING SPACED-APART SUPERLATTICESATOMERA INCORPORATEDPatented Case2020-11-0310825902
RICHARD BURTON
Marek Hytha
Robert J. Mears
United States
United States
United States
SPALLA, DAVID C
2019-07-1716513832METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION REGION INCLUDING SPACED-APART SUPERLATTICESAtomera IncorporatedPatented Case2021-03-0210937868US20210020750A1
RICHARD BURTON
Marek Hytha
Robert J. Mears
United States
United States
United States
REAMES, MATTHEW L
2019-07-1716513825SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUDING SPACED-APART SUPERLATTICES AND RELATED METHODSATOMERA INCORPORATEDPatented Case2021-11-2311183565US20210020749A1
Richard Burton
Marek Hytha
Robert J. Mears
United States
United States
United States
NGUYEN, NIKI HOANG
2019-04-1016380149INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2020-09-0110763370US20190319136A1
Robert John Stephenson
United Kingdom
PARKER, JOHN M
2019-04-1016380142METHOD FOR MAKING AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2023-05-3011664459US20190319135A1
ROBERT JOHN STEPHENSON
United Kingdom
ROLAND, CHRISTOPHER M
2019-04-1016380111SEMICONDUCTOR DEVICE INCLUDING VERTICALLY INTEGRATED OPTICAL AND ELECTRONIC DEVICES AND COMPRISING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2021-01-0510884185US20190317277A1
ROBERT JOHN STEPHENSON
United Kingdom
NGUYEN, THINH T
2019-04-1016380091METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING VERTICALLY INTEGRATED OPTICAL AND ELECTRONIC DEVICES AND COMPRISING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2022-06-0711355667US20190319167A1
ROBERT JOHN STEPHENSON
United Kingdom
ROLAND, CHRISTOPHER M
2019-03-0816296414SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A SUPERLATTICEATOMERA INCORPORATEDPatented Case2020-09-1510777451US20190280090A1
ROBERT JOHN STEPHENSON
RICHARD BURTON
DMITRI CHOUTOV
NYLES WYNN CODY
DANIEL CONNELLY
ROBERT J, MEARS
ERWIN TRAUTMANN
United Kingdom
United States
United States
United States
United States
United States
United States
WITHERS, GRANT S
2019-03-0816296400METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A SUPERLATTICEAtomera IncorporatedPatented Case2020-12-2910879356US20190279897A1
Robert John Stephenson
Richard Burton
Dmitri Choutov
Nyles Wynn Cody
Daniel Connelly
Robert J. Mears
Erwin Trautmann
United Kingdom
United States
United States
United States
United States
United States
United States
BOOTH, RICHARD A

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