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ATOMERA INCORPORATED (ATOM) Patents: Active, 2016

ATOMERA INCORPORATED Active Patents

4 granted patents the USPTO still lists as patented, newest filing first, as the USPTO Open Data Portal records them; the company is the first-named applicant. The application number opens the full record at Patent Center.

  • 2016-06-01: Application 15169983; Invention METHOD FOR MAKING ENHANCED SEMICONDUCTOR STRUCTURES IN SINGLE WAFER PROCESSING CHAMBER WITH DESIRED UNIFORMITY CONTROL; Applicant ATOMERA INCORPORATED; Status Patented Case.
  • 2016-05-13: Application 15154296; Invention SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS PROVIDING HALO IMPLANT PEAK CONFINEMENT AND RELATED METHODS; Applicant Atomera, Incorporated; Status Patented Case.
  • 2016-05-13: Application 15154276; Invention SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND PUNCH-THROUGH STOP (PTS) LAYERS AT DIFFERENT DEPTHS AND RELATED METHODS; Applicant Atomera, Incorporated; Status Patented Case.
  • 2016-01-15: Application 14996312; Invention METHODS FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ATOMIC LAYER STRUCTURES USING N2O AS AN OXYGEN SOURCE; Applicant ATOMERA INCORPORATED; Status Patented Case.
FiledApplicationInventionApplicantStatusGrantedPatentPublished asInventor nameInventor countryExaminer
2016-06-0115169983METHOD FOR MAKING ENHANCED SEMICONDUCTOR STRUCTURES IN SINGLE WAFER PROCESSING CHAMBER WITH DESIRED UNIFORMITY CONTROLATOMERA INCORPORATEDPatented Case2017-08-019721790US20160358773A1
Robert J. Mears
Nyles Cody
Robert John Stephenson
United States
United States
United Kingdom
LEE, KYOUNG
2016-05-1315154296SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS PROVIDING HALO IMPLANT PEAK CONFINEMENT AND RELATED METHODSAtomera, IncorporatedPatented Case2018-02-209899479US20160336407A1
Robert J. Mears
Hideki Takeuchi
United States
United States
WHALEN, DANIEL B
2016-05-1315154276SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND PUNCH-THROUGH STOP (PTS) LAYERS AT DIFFERENT DEPTHS AND RELATED METHODSAtomera, IncorporatedPatented Case2018-04-109941359US20160336406A1
Robert J. Mears
Hideki Takeuchi
United States
United States
NGUYEN, CUONG B
2016-01-1514996312METHODS FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ATOMIC LAYER STRUCTURES USING N2O AS AN OXYGEN SOURCEATOMERA INCORPORATEDPatented Case2017-01-319558939
Robert Stephenson
Nyles Cody
United Kingdom
United States
NGUYEN, THANH T

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